In this study, a novel mesa design of GaAs single junction solar cells were implemented with a passivation layer deposited by an atomic layer deposition (ALD) system. With the addition of a colloidal quantum dot layer to enable the luminescent downshifting effect, we are able to demonstrate an enhancement of the short-circuit current density as high as 33.75%. The power conversion efficiency of such devices can also be increased by 22.37% in the best case. Further analysis showed the nearly sizeindependent dark current density among various ALD-passivated devices.
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